Om. Ivanenko et Kv. Mitsen, MODIFICATION OF ELECTRON SPECTRUM AND PROPERTIES OF HTSC DURING DOPING, Journal of superconductivity, 7(3), 1994, pp. 627-630
A mechanism for the influence of doping on the electron spectrum of La
2-xSrxCuO4 and Nd2-xCexCuO4 is proposed. In the framework of simple mo
del taking into account the local nature of HTSC electron-properties,
the appearance of ''midgap states'' and the existence of critical conc
entration values (0.15 and 0.25) are explained. The effect of doping-i
nduced changes of electron structure on transport and superconducting
properties of La2-xSrxCuO4 and Nd2-xCexCuO4 is considered. The depende
nce of the Hall resistance on doping concentration, x, is discussed. I
t is shown that in Nd2-xCexCuO4 the pair level of ''negative U-centers
'' arises at the top of the valence band only at x = 0.15, and the die
lectric-metal transition takes place. The superconductivity in Nd2-xCe
xCuO4 occurs in the hole-conductive phase.