AES STUDIES OF ANTIMONY SURFACE SEGREGATION IN NONORIENTED SILICON STEEL

Antimony surface segregation in decarburized non-oriented silicon stee l doped with 0.05 wt% Sb and 0.1 wt% Sb was investigated by a previous ly developed experimental method, based on Auger Electron Spectroscopy , its kinetics determined in the temperature range from 500 to 850-deg rees-C. It was found that antimony segregation proceeded with perceiva ble velocity at 600-degrees-C and increased with increasing temperatur e. The thickness of the equilibrium antimony surface segregation layer reached after 30 minutes of annealing at 700-degrees-C was estimated to correspond to a monolayer. From the segregation kinetics and its te mperature dependence in the temperature range from 650 to 750-degrees- C the diffusion coefficient and the activation energy for antimony dif fusion in bulk were also estimated. The influence of antimony on the g rowth of recrystallized grains is discussed from obtained results.