GROWTH DYNAMICS OF FRACTAL GE CLUSTERS DURING CRYSTALLIZATION OF AMORPHOUS PHASE ON POLYCRYSTALLINE AU LAYER

Citation
A. Sugawara et al., GROWTH DYNAMICS OF FRACTAL GE CLUSTERS DURING CRYSTALLIZATION OF AMORPHOUS PHASE ON POLYCRYSTALLINE AU LAYER, Materials science & engineering. A, Structural materials: properties, microstructure and processing, 179, 1994, pp. 355-360
Citations number
10
Categorie Soggetti
Material Science
ISSN journal
09215093
Volume
179
Year of publication
1994
Pages
355 - 360
Database
ISI
SICI code
0921-5093(1994)179:<355:GDOFGC>2.0.ZU;2-Y
Abstract
The crystallization of amorphous Ge on a polycrystalline Au layer has been investigated by means of in situ transmission electron microscopy and scanning Auger microscopy. The polycrystalline Ge clusters showed a fractal morphology and their fractal dimensions decreased with incr easing thickness of the Au underlayer. The growth size of the Ge clust ers has been found to obey a power law. The results suggest that the g rowth is diffusion controlled by Ge atoms in a Ge-depleted zone surrou nding a Ge cluster. The morphology has been well explained in terms of the diffusion length and the size of the Au crystallites in the Au un derlayer.