THE GROWTH OF (100) ORIENTATED DIAMOND FILMS

Citation
P. John et al., THE GROWTH OF (100) ORIENTATED DIAMOND FILMS, DIAMOND AND RELATED MATERIALS, 3(4-6), 1994, pp. 388-392
Citations number
11
Categorie Soggetti
Material Science
ISSN journal
09259635
Volume
3
Issue
4-6
Year of publication
1994
Pages
388 - 392
Database
ISI
SICI code
0925-9635(1994)3:4-6<388:TGO(OD>2.0.ZU;2-C
Abstract
Quasi-equilibrium calculations were performed on the C-H and C-H-O sys tems to calculate the thermodynamic stability of diamond and graphite phases under CVD conditions. Exclusive diamond growth is dependent, in part, on the increased thermodynamic stability of H-terminated crysta llographic surfaces. This feature was included in the methodology by e stimating the surface enthalpies by group additivity methods. The lowe r boundary in the Bachmann ternary diagram which defines the demarcati on line between the growth and non-growth regions was calculated. The gradient of the line is a strong function of the degree of stabilizati on of the H-terminated diamond surfaces. Using mixtures of CH4-CO-H-2 of compositions close to the CO line of the phase diagram, (100) facet ed films were grown by microwave assisted CVD at rates of 1.5-2.0 mum h-1.