NUCLEATION AND GROWTH OF CVD DIAMOND ON MAGNESIUM-OXIDE (100) AND TITANIUM NITRIDE MAGNESIUM-OXIDE (100) SURFACES

The lattice parameters of cubic MgO(100) and TiN(100) are 4.23 angstro m and 4.21 angstrom respectively. As potential heteroepitaxial substra tes for diamond films they represent a lattice mismatch of approximate ly 18%. This paper reports the nucleation of CVD diamond particles on MgO(100) surfaces using a low temperature process to overcome the ther mal etching of the magnesium oxide substrate. Physically vapour-deposi ted TiN thin films have also been deposited onto MgO(100) substrates w ith preferred orientation. Doped and undoped CVD diamond was deposited onto TiN-MgO(100) substrates to investigate the influence of doping e ffects on low temperature nucleation and growth.