STRUCTURAL CHARACTERIZATION OF DIAMOND FILMS GROWN EPITAXIALLY ON SILICON

Diamond films have been deposited on Si(001) and Si(111) substrates. U sing a bias pretreatment process resulted in a high portion of epitaxi ally aligned diamond nuclei on both substrates. Scanning electron micr oscopy was used to characterize the films qualitatively. X-ray diffrac tion texture measurements yielded a preferential orientation of the di amond crystallites, which was diamond(001)[110] parallel-to Si(001)[11 0] and diamond(111)[110BAR] parallel-to Si(111)[110BAR] for Si(001) an d Si(111) respectively. Besides the poles of these epitaxially aligned crystals we observe further maxima in the pole figures which we attri bute to twins. The latter was confirmed by direct observation in a sca nning electron microscope. Rocking curves show a full width at half-ma ximum of about 12-degrees for diamond on Si(001) and 8-degrees for dia mond on Si(111) which gives the amount of polar misalignment. Azimutha l misalignments as deduced from the pole figures are nearly the same s ize.