S. Barrat et al., MORPHOMETRIC ANALYSIS OF DIAMOND CRYSTALS ELABORATED BY MICROWAVE PLASMA-ASSISTED CHEMICAL-VAPOR-DEPOSITION - APPLICATION TO TEXTURED FILMS, DIAMOND AND RELATED MATERIALS, 3(4-6), 1994, pp. 520-524
Morphometric analysis was carried out on both isolated single-crystal
and multiply twinned diamond particles (MTPs) elaborated by microwave
plasma assisted chemical vapour deposition, in order to determine, in
our reactor, the growth parameter alpha as a function of deposition pa
rameters such as substrate temperature and methane concentration. The
evolution of alpha allows the MTPs to be described, in particular the
formation of grooves at the emergence of the twin plane. Free-standing
diamond films, elaborated using the same conditions as for isolated p
articles, were characterized by X-ray texture measurements to deduce t
he growth parameter alpha associated with these films. We reveal that
the orientation of the silicon substrate can strongly delay texture fo
rmation because of an unfavourable substrate effect. Finally, the grow
th parameter alpha associated with diamond films is higher than the al
pha value associated with isolated particles obtained under the same e
xperimental conditions.