CHARACTERISTICS OF A-C-H-SI FILMS DEPOSITED BY RF-SPUTTERING UNDER VARIOUS DEPOSITION CONDITIONS

In this paper we report the results of an extensive investigation of a -C:H:Si alloys deposited by an r.f. diode sputtering system, operated with a graphite target and an Ar-SiH4 atmosphere. This allowed us to s tudy the influence of the inclusion of silicon in a-C:H. It is shown t hat, according to the deposition conditions, various sets of propertie s can be realized. In particular, small amounts of silicon added at a low substrate temperature give diamond-like characteristics, while sil icon added at a high substrate temperature causes polymer-like behavio ur. An increase in silane in the gas phase enables the deposition of C :H:Si with tetrahedral structure. The sets of deposition conditions gi ving different types of material were identified.