CHARACTERIZATION OF TANTALUM IMPURITIES IN HOT-FILAMENT DIAMOND LAYERS

Citation
M. Griesser et al., CHARACTERIZATION OF TANTALUM IMPURITIES IN HOT-FILAMENT DIAMOND LAYERS, DIAMOND AND RELATED MATERIALS, 3(4-6), 1994, pp. 638-644
Citations number
25
Categorie Soggetti
Material Science
ISSN journal
09259635
Volume
3
Issue
4-6
Year of publication
1994
Pages
638 - 644
Database
ISI
SICI code
0925-9635(1994)3:4-6<638:COTIIH>2.0.ZU;2-N
Abstract
During hot-filament diamond deposition metal impurities (e.g. tantalum ) can evaporate from the filament. The incorporation of tantalum in di amond films was studied as a function of process conditions using seco ndary ion mass spectrometry, Rutherford backscattering spectrometry an d transmission electron microscopy. It was found that the tantalum con centration depends on the initial carburization status of the filament , its temperature and the diamond growth rate. If diamond deposition i s started with metallic tantalum filaments, TaC nanoprecipitates are f ormed at the interface.