SELECTIVE ETCHING OF C-BN LAYERS

The paper is concerned with the wet chemical etching of boron nitride layers. It has been shown that irrespective of the layer structure (c- BN or e-BN), the layer can be ''torn away'' from its Si or SiO2 substr ate by treating it with an appropriate reagent; for example, the H2SO2 + H2O2 solution. However, selective etching, which meets the requirem ents of microelectronic technology, can only be effected here using th e lift-off technique. In the present study, microelectronic structures were fabricated by this technique. The results obtained with c-BN and diamond-like layers subjected to this etching were similar.