CHARACTERIZATION OF DEFECTS IN BORON-IMPLANTED CHEMICALLY VAPOR-DEPOSITED DIAMOND FILMS BY ELECTRON-PARAMAGNETIC-RESONANCE AND CATHODOLUMINESCENCE

Authors
GHEERAERT E FONTAINE F DENEUVILLE A KHONG YL COLLINS AT
Citation
E. Gheeraert et al., CHARACTERIZATION OF DEFECTS IN BORON-IMPLANTED CHEMICALLY VAPOR-DEPOSITED DIAMOND FILMS BY ELECTRON-PARAMAGNETIC-RESONANCE AND CATHODOLUMINESCENCE, DIAMOND AND RELATED MATERIALS, 3(4-6), 1994, pp. 737-740
Citations number
13
Categorie Soggetti
Material Science
Journal title
DIAMOND AND RELATED MATERIALS → ACNP
ISSN journal
09259635
Volume
3
Issue
4-6
Year of publication
1994
Pages
737 - 740
Database
ISI
SICI code
0925-9635(1994)3:4-6<737:CODIBC>2.0.ZU;2-O
Abstract
The same electron paramagnetic resonance active defects (C interactive dangling bonds), with similar behaviour with respect to B dose before (20 centres per B ion, amorphization threshold of 10(15) cm-2) and af ter annealing at 800-degrees-C (concentration reduced by 95%), are cre ated by B implantation in chemically vapour deposited polycrystalline films and type Ha natural crystals of diamond. A broad 2.4 eV cathodol uminescence band (substitutional B), appears only in polycrystalline f ilms. Its intensity relative to the 2.92 eV band increases with the B dose and decreases after annealing.