SIMULATION OF ELECTRON-SCATTERING PROPERTIES OF DIAMOND MEMBRANES IN X-RAY MASK FABRICATION

Citation
G. Messina et al., SIMULATION OF ELECTRON-SCATTERING PROPERTIES OF DIAMOND MEMBRANES IN X-RAY MASK FABRICATION, DIAMOND AND RELATED MATERIALS, 3(4-6), 1994, pp. 942-946
Citations number
6
Categorie Soggetti
Material Science
ISSN journal
09259635
Volume
3
Issue
4-6
Year of publication
1994
Pages
942 - 946
Database
ISI
SICI code
0925-9635(1994)3:4-6<942:SOEPOD>2.0.ZU;2-7
Abstract
A theoretical investigation of electron-scattering properties of diamo nd substrates is presented. A complete simulation combining Monte Carl o calculation of energy deposition and a resist development model is c arried out for evaluating the suitability of diamond as a membrane for high-resolution X-ray masks, with respect to silicon. Simulation resu lts concerning the single-layer resist process for X-ray mask fabricat ion demonstrate that, in the limits of low and high e-beam energy, the re is no significant difference in using silicon or diamond. In contra st, at intermediate energy, the choice of the membrane may be critical in the prospect of attaining high resolutions.