VERY-LOW RESISTIVITY AL-SI OHMIC CONTACTS TO BORON-DOPED POLYCRYSTALLINE DIAMOND FILMS

Authors
WERNER M DORSCH O BAERWIND HU ERSOY A OBERMEIER E JOHNSTON C ROMANI S CHALKER PR MOORE V BUCKLEYGOLDER IM
Citation
M. Werner et al., VERY-LOW RESISTIVITY AL-SI OHMIC CONTACTS TO BORON-DOPED POLYCRYSTALLINE DIAMOND FILMS, DIAMOND AND RELATED MATERIALS, 3(4-6), 1994, pp. 983-985
Citations number
11
Categorie Soggetti
Material Science
Journal title
DIAMOND AND RELATED MATERIALS → ACNP
ISSN journal
09259635
Volume
3
Issue
4-6
Year of publication
1994
Pages
983 - 985
Database
ISI
SICI code
0925-9635(1994)3:4-6<983:VRAOCT>2.0.ZU;2-R
Abstract
The effects on the contact resistivity of annealing Al-Si (99:1) conta cts on diamond with different B concentrations have been investigated. The change of the current-voltage characteristic from rectifying to o hmic on lightly doped samples, and the drop of the contact resistivity by orders of magnitude for more heavily B-doped samples after anneali ng at 450-degrees-C in N2, are attributed to the formation of SiC at t he metal-diamond interface. The existence of the SiC interface has bee n verified by X-ray-induced photoelectron spectroscopy. In addition, t he contact resistivity is a very sensitive function of doping at high doping concentrations. Contact resistivities as low as about 10(-7) OM EGA cm2 have been achieved.