The density of thin vapour-deposited films of zinc selenide was determ
ined by spectrophotometry combined with Rutherford backscattering spec
trometry. Bulk stoichiometry of the films was measured by Rutherford b
ackscattering spectroscopy. It was found that the films were relativel
y rich in Se. Depth profile study of the films, by x-ray photoelectron
spectroscopy, revealed that surfaces were rich in Se while, away from
the surface and inside the film, the Se content decreased with depth
until the stoichiometric ratio of the compound ZnSe was reached. The d
ensity determined was 0.98 +/- 3% of the bulk value for ZnSe.