DENSITY OF THIN VAPOR-DEPOSITED FILMS OF ZINC SELENIDE

Citation
Ee. Khawaja et al., DENSITY OF THIN VAPOR-DEPOSITED FILMS OF ZINC SELENIDE, Journal of physics. D, Applied physics, 27(5), 1994, pp. 1008-1013
Citations number
25
Categorie Soggetti
Physics, Applied
ISSN journal
00223727
Volume
27
Issue
5
Year of publication
1994
Pages
1008 - 1013
Database
ISI
SICI code
0022-3727(1994)27:5<1008:DOTVFO>2.0.ZU;2-T
Abstract
The density of thin vapour-deposited films of zinc selenide was determ ined by spectrophotometry combined with Rutherford backscattering spec trometry. Bulk stoichiometry of the films was measured by Rutherford b ackscattering spectroscopy. It was found that the films were relativel y rich in Se. Depth profile study of the films, by x-ray photoelectron spectroscopy, revealed that surfaces were rich in Se while, away from the surface and inside the film, the Se content decreased with depth until the stoichiometric ratio of the compound ZnSe was reached. The d ensity determined was 0.98 +/- 3% of the bulk value for ZnSe.