Z. Ouennoughi et al., ANALYSIS OF INP SCHOTTKY TUNNEL METAL-INSULATOR-SEMICONDUCTOR DIODE CHARACTERISTICS WITH A CONDUCTANCE TECHNIQUE, Journal of physics. D, Applied physics, 27(5), 1994, pp. 1014-1019
The current-voltage characteristics (I-V) of Au-n-type InP Schottky di
odes and MIS Schottky diodes fabricated by multipolar plasma oxidation
are measured at various temperatures in order to investigate the appl
icability of a newly proposed conductance technique. Experimental data
are analysed on the basis of this technique relating the series resis
tance R(s) and the ideality factor n to the conductance G = dI/dV, and
leading also to the determination of the saturation current I(s). The
values obtained for the temperature coefficient of the Schottky barri
er height alpha were -1.3 x 10(-4) eV K-1 and 4.1 X 10(-4) eV K-1, dep
ending on the substrate, and the ideality factors were around 1.07. Th
e Richardson plot ln(I(s)/T2) against (1/T) is well fitted to a straig
ht line (T is the temperature). It is shown that, when some conditions
discussed in the paper are fulfilled, the method can be applied to mi
s Schottky diodes. In this case the apparent barrier height phi(Bh) in
creases linearly with increasing temperature and the electron tunnelli
ng factor is estimated to be 16.