ANALYSIS OF INP SCHOTTKY TUNNEL METAL-INSULATOR-SEMICONDUCTOR DIODE CHARACTERISTICS WITH A CONDUCTANCE TECHNIQUE

The current-voltage characteristics (I-V) of Au-n-type InP Schottky di odes and MIS Schottky diodes fabricated by multipolar plasma oxidation are measured at various temperatures in order to investigate the appl icability of a newly proposed conductance technique. Experimental data are analysed on the basis of this technique relating the series resis tance R(s) and the ideality factor n to the conductance G = dI/dV, and leading also to the determination of the saturation current I(s). The values obtained for the temperature coefficient of the Schottky barri er height alpha were -1.3 x 10(-4) eV K-1 and 4.1 X 10(-4) eV K-1, dep ending on the substrate, and the ideality factors were around 1.07. Th e Richardson plot ln(I(s)/T2) against (1/T) is well fitted to a straig ht line (T is the temperature). It is shown that, when some conditions discussed in the paper are fulfilled, the method can be applied to mi s Schottky diodes. In this case the apparent barrier height phi(Bh) in creases linearly with increasing temperature and the electron tunnelli ng factor is estimated to be 16.