A STRUCTURAL STUDY OF POLYCRYSTALLINE AIN FILMS PREPARED BY ION-BEAM-ASSISTED DEPOSITION

Aluminium nitride films were synthesized by electron gun evaporation o f aluminium on Si(111) wafer and glassy carbon, with simultaneous bomb ardment of 5-20 keV nitrogen ions. The resultant films were characteri zed by x-ray photoelectron spectroscopy, x-ray diffraction and Rutherf ord backscattering spectrometry. Under specific experimental condition , polycrystalline AIN films, with a hexagonal structure of fine crysta llinity, were obtained. The correlation between experimental parameter s and the resulting structure as well as the stoichiometry of the AIN films is also discussed.