LOCAL ORDER IN SILICON OXINITRIDE INVESTI GATED BY X-RAY PHOTOELECTRON-SPECTROSCOPY

Authors
SAOUDI R HOLLINGER G STRABONI A
Citation
R. Saoudi et al., LOCAL ORDER IN SILICON OXINITRIDE INVESTI GATED BY X-RAY PHOTOELECTRON-SPECTROSCOPY, Journal de physique. III, 4(5), 1994, pp. 881-897
Citations number
26
Categorie Soggetti
Material Science","Phsycs, Fluid & Plasmas","Physics, Applied
Journal title
Journal de physique. III → ACNP
ISSN journal
11554320
Volume
4
Issue
5
Year of publication
1994
Pages
881 - 897
Database
ISI
SICI code
1155-4320(1994)4:5<881:LOISOI>2.0.ZU;2-3
Abstract
X-ray photoelectron spectroscopy has been used to study core level and valence band spectra of reference compoundS SiO2, Si2N2O, Si3N4 and t hin oxinitride films SiO(x)N(y) obtained by nitridation of SiO2 films in an ammonia plasma. The results obtained for the reference compounds are discussed with respect to their crystallographic properties. Thes e data are used for discussing local order and chemical composition of oxinitride films.