FABRICATION OF 30 NM INTER-ELECTRODE GAP COPLANAR TUNNEL-JUNCTIONS WITH BURIED ELECTRODES

Authors
ITOUA S JOACHIM C ROUSSET B FABRE N
Citation
S. Itoua et al., FABRICATION OF 30 NM INTER-ELECTRODE GAP COPLANAR TUNNEL-JUNCTIONS WITH BURIED ELECTRODES, Journal de physique. III, 4(5), 1994, pp. 929-935
Citations number
16
Categorie Soggetti
Material Science","Phsycs, Fluid & Plasmas","Physics, Applied
Journal title
Journal de physique. III → ACNP
ISSN journal
11554320
Volume
4
Issue
5
Year of publication
1994
Pages
929 - 935
Database
ISI
SICI code
1155-4320(1994)4:5<929:FO3NIG>2.0.ZU;2-N
Abstract
Co-planar tunnel junctions with a gap length in the 30 nm range have b een fabricated using a 20 keV scanning electron microscope and a Au-Pd lift-off. The junction electrodes are less than 200 nm in width and a re buried in the SiO2 substrate. This makes the gap surface accessible for atomic force microscope characterization and for local modificati on.