APPLICATION OF THE SIMS METHOD IN STUDIES OF CR SEGREGATION IN CR-DOPED COO .1. ASPECTS OF QUANTITATIVE-ANALYSIS

Aspects of calibration of intensities of SIMS secondary ions vs concen tration as well as sputtering time vs depth are considered for Cr-dope d CoO. Advantages and limitations of the SIMS method in quantitative a nalysis of segregation-induced concentration profiles in oxide crystal s are discussed. The studies indicate a substantial effect due to char ging the surface during sputtering. The depth calibration was performe d by using the Ta2O5/Ta system as a standard. Good depth resolution wa s revealed. The calibration dependence of Cr intensities on concentrat ion is characterized by a wide scatter of data caused by charging the surface. Very good shape reproducibility of the intensity ratio vs dep th profiles was revealed. Therefore, normalized intensity ratios can b e used for calibration.