MOLECULAR-BEAM EPITAXY OF CDF2 LAYERS ON CAF2(111) AND SI(111)

Citation
Ns. Sokolov et al., MOLECULAR-BEAM EPITAXY OF CDF2 LAYERS ON CAF2(111) AND SI(111), Applied physics letters, 64(22), 1994, pp. 2964-2966
Citations number
11
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
64
Issue
22
Year of publication
1994
Pages
2964 - 2966
Database
ISI
SICI code
0003-6951(1994)64:22<2964:MEOCLO>2.0.ZU;2-B
Abstract
Cadmium fluoride single crystal layers have been grown on CaF2/Si(111) or Si(111) substrates by molecular beam epitaxy. The structures are e xpected to have attractive electronic properties. The growth was monit ored by reflections high energy electron diffraction (RHEED) technique s. A distinct (square-root 3 X square-root 3) R30-degrees superstructu re has been observed on the CdF2(111) surface at growth temperatures b elow 150-degrees-C. RHEED intensity oscillations indicate a two-dimens ional growth mode of CdF2.