PROPERTIES OF AL2O3 OPTICAL COATINGS ON GAAS PRODUCED BY OXIDATION OFEPITAXIAL ALAS GAAS FILMS/

Authors
SCHUBERT EF PASSLACK M HONG M MANNERTS J OPILA RL PFEIFFER LN WEST KW BETHEA CG ZYDZIK GJ
Citation
Ef. Schubert et al., PROPERTIES OF AL2O3 OPTICAL COATINGS ON GAAS PRODUCED BY OXIDATION OFEPITAXIAL ALAS GAAS FILMS/, Applied physics letters, 64(22), 1994, pp. 2976-2978
Citations number
9
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
64
Issue
22
Year of publication
1994
Pages
2976 - 2978
Database
ISI
SICI code
0003-6951(1994)64:22<2976:POAOCO>2.0.ZU;2-Y
Abstract
Auger analysis of oxidized AlAs epitaxial layers grown by molecular-be am epitaxy reveals that the composition of the films is stoichiometric Al2O3. High optical quality of the films is demonstrated by optical r eflection and transmission measurements. A reflectivity of 6% is measu red for an antireflection coating on GaAs. Leakage currents in the nA range and resistivities >5X10(11) OMEGA cm are deduced from current-vo ltage measurements. Capacitance-voltage measurements on metal-oxide-se miconductor structures using the Al2O3 films obtained by oxidizing AlA s, reveal a significant reduction of the interface state density as co mpared to conventional, electron beam evaporated Al2O3.