ROLE OF HOT-ELECTRON BASE TRANSPORT IN ABRUPT EMITTER INP GA0.43IN0.53AS HETEROJUNCTION BIPOLAR-TRANSISTORS

Authors
RITTER D HAMM RA FEYGENSON A SMITH PR
Citation
D. Ritter et al., ROLE OF HOT-ELECTRON BASE TRANSPORT IN ABRUPT EMITTER INP GA0.43IN0.53AS HETEROJUNCTION BIPOLAR-TRANSISTORS, Applied physics letters, 64(22), 1994, pp. 2988-2990
Citations number
11
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
64
Issue
22
Year of publication
1994
Pages
2988 - 2990
Database
ISI
SICI code
0003-6951(1994)64:22<2988:ROHBTI>2.0.ZU;2-N
Abstract
The high frequency performance of InP/Ga0.47In0.53As heterojunction bi polar transistors (HBTs) with a varying base thickness was measured. T he diffusion constant of minority carrier electrons in the heavily dop ed base was found to be 105 cm2/s. It is demonstrated that the short b ase transit times in fast InP/Ga0.47In0.53As HBTs is mainly due to the high value of the diffusion constant of thermalized electrons. The co ntribution of hot electron ballistic transport is relatively small.