BAND DISCONTINUITY OF STRAINED-LAYER GAINAS GAINASP HETEROSTRUCTURES

Authors
QUEISSER I HARLE V DORNEN A SCHOLZ F
Citation
I. Queisser et al., BAND DISCONTINUITY OF STRAINED-LAYER GAINAS GAINASP HETEROSTRUCTURES, Applied physics letters, 64(22), 1994, pp. 2991-2993
Citations number
11
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
64
Issue
22
Year of publication
1994
Pages
2991 - 2993
Database
ISI
SICI code
0003-6951(1994)64:22<2991:BDOSGG>2.0.ZU;2-0
Abstract
We performed low temperature photoluminescence excitation and photocur rent measurements on tensile and compressively strained GaxIn1-xAs qua ntum-well layers grown on GaInAsP, which was lattice matched to the In P substrate. From these measurements the excitonic transitions in the unstrained and strained samples can be identified. We determine the ef fective masses in growth direction GaxIn1-xAs (0.3<x(Ga)<0.6) and the band offsets of the GaxIn1-xAs/GaInAsP heterojunction (0.4<x(Ga)<0.6).