SELF-INVERSION OF EMISSION-LINES OF FREE-EXCITONS IN CDS SINGLE-CRYSTALS

Authors
YABLONSKII GP RAKOVICH YP GLADYSHCHUK AA
Citation
Gp. Yablonskii et al., SELF-INVERSION OF EMISSION-LINES OF FREE-EXCITONS IN CDS SINGLE-CRYSTALS, Semiconductors, 28(4), 1994, pp. 374-376
Citations number
11
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
28
Issue
4
Year of publication
1994
Pages
374 - 376
Database
ISI
SICI code
1063-7826(1994)28:4<374:SOEOFI>2.0.ZU;2-S
Abstract
A self-inversion of emission lines of free excitons in CdS single crys tals has been observed for the first time. The inversion occurs after a heating from 77 to 295 K and then from 295 to 395 K, followed by a r apid cooling to liquid-nitrogen temperature. This inversion is attribu table to a self-absorption of the radiation in a thin surface layer in which the exciton concentration is relatively low. The exciton distri bution is nonuniform because of electric fields which arise during the charging of surface states.