EFFECT OF VARIOUS PROCESSING METHODS ON THE STATE OF A 6H-SIC(000(1)OVERBAR) SURFACE

Auger spectrometry has been used to study the effects of various types of surface treatment on the degree of disorder and the stoichiometry of 6H-SiC(0001BAR). The methods studied were ion etching in a plasma o f argon and nitrogen, reactive ion etching in a plasma of SF6 and CF4, chemical etching, and the chemical removal of an oxide from a test sa mple oxidized beforehand. The results show that the ion etching result s in a complete destruction of Si-C bonds on the surface. Processing b y all the other methods results in primarily a disruption of the stoic hiometry. The effect of heating and electron bombardment on the C/Si r atio after the processing was studied. It was shown that the change in stoichiometry during heating depends essentially on the preliminary p rocessing method.