EFFECT OF AN ELECTRON-BEAM ON THE ENERGY-DISTRIBUTION OF LOCALIZED STATES IN AMORPHOUS-SILICON NITRIDE

The effect of the electron beam which excites the Si L2,3 spectrum on the energy distribution of localized states in the band gap of amorpho us silicon nitride has been studied by ultrasoft x-ray emission spectr oscopy. With increasing dose of the electron bombardment, there is a r edistribution of electron density out of the energy interval E=E(v)+2. 2 eV into the interval E=E(v)+0.5 eV. The decrease in the electron den sity at E=E(v)+2.2 eV is attributed to a trapping of electrons by D0 c enters, accompanied by a conversion of the latter into D- centers. The latter centers are localized along the energy scale near the conducti on band.