ELECTROLUMINESCENCE SPECTRA OF VARIABLE-GAP CDXHG1-XTE CDTE STRUCTURES AT T=300-K

Spectra of the recombination radiation of CdxHg1-xTe/CdTe expitaxial s tructures containing a uniform narrow-gap layer (a solid solution with x=0.23), a wide-gap layer (CdTe), and a variable-gap transition layer have been studied theoretically and experimentally. The emission occu rs during a redistribution of current carriers in the uniform-gap and variable-gap layers as a result of exclusion and accumulation effects as a current flows through the structure. The shift of the peak in the positive luminescence spectrum in the HBARomega range from 0.2 to 0.3 5 eV with increasing current is attributed to an accumulation of carri ers in the variable-gap transition layer. The shift of the peak in the negative luminescence spectrum is far smaller. Possible practical app lications of the results are discussed.