The behavior of the energy gap epsilon between the bottom of the condu
ction band and the upper Hubbard band has been studied over the wide d
oping range 0.07 less-than-or-equal-to N1/3 a less-than-or-equal-to 0.
25, where N is the dopant concentration, and a is the carrier localiza
tion length at an impurity. At N1/3 a less-than-or-equal-to 0.12, the
experimental values of epsilon(N) agree with values calculated from Ni
shimura's theory.