ENERGY-GAP BETWEEN THE CONDUCTION-BAND AND THE UPPER HUBBARD BAND

Citation
Em. Gershenzon et al., ENERGY-GAP BETWEEN THE CONDUCTION-BAND AND THE UPPER HUBBARD BAND, Semiconductors, 28(4), 1994, pp. 401-402
Citations number
10
Categorie Soggetti
Physics, Condensed Matter
Journal title
ISSN journal
10637826
Volume
28
Issue
4
Year of publication
1994
Pages
401 - 402
Database
ISI
SICI code
1063-7826(1994)28:4<401:EBTCAT>2.0.ZU;2-N
Abstract
The behavior of the energy gap epsilon between the bottom of the condu ction band and the upper Hubbard band has been studied over the wide d oping range 0.07 less-than-or-equal-to N1/3 a less-than-or-equal-to 0. 25, where N is the dopant concentration, and a is the carrier localiza tion length at an impurity. At N1/3 a less-than-or-equal-to 0.12, the experimental values of epsilon(N) agree with values calculated from Ni shimura's theory.