A 100-GHZ MONOLITHIC CASCODE INALAS INGAAS HEMT OSCILLATOR

Authors
KWON YW PAVLIDIS D MARSH P BROCK T STREIT DC
Citation
Yw. Kwon et al., A 100-GHZ MONOLITHIC CASCODE INALAS INGAAS HEMT OSCILLATOR, IEEE microwave and guided wave letters, 4(5), 1994, pp. 135-137
Citations number
NO
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE microwave and guided wave letters → ACNP
ISSN journal
10518207
Volume
4
Issue
5
Year of publication
1994
Pages
135 - 137
Database
ISI
SICI code
1051-8207(1994)4:5<135:A1MCII>2.0.ZU;2-P
Abstract
The design, fabrication,and experimental characteristics of a 100-GHz monolithic cascode HEMT oscillator are presented. A cascode pair of In AlAs/InGaAs HEMT's has been used as the active cell to enhance the neg ative resistance so that more process tolerance can be achieved. The m onolithic circuit oscillates around 100 GHz with an output power of 2 dBm at a drain bias voltage as small as 0.9 V. This is the first demon stration of cascode HEMT oscillators at W-band.