GROWTH OF HEAVY CARBON-DOPED GALNAS LATTICE-MATCHED TO INP BY CHEMICAL BEAM EPITAXY

Authors
PALMSTROM CJ VANDERGAAG BP SONG JI HONG WP SCHWARZ SA NOVAK S
Citation
Cj. Palmstrom et al., GROWTH OF HEAVY CARBON-DOPED GALNAS LATTICE-MATCHED TO INP BY CHEMICAL BEAM EPITAXY, Applied physics letters, 64(23), 1994, pp. 3139-3141
Citations number
16
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
64
Issue
23
Year of publication
1994
Pages
3139 - 3141
Database
ISI
SICI code
0003-6951(1994)64:23<3139:GOHCGL>2.0.ZU;2-E
Abstract
Successful growth of p- type (approximately 1 X 10(20) holes/cm-3) C-d oped lattice matched GaInAs on InP(100) has been demonstrated using ch emical beam epitaxy. Carbon tetrachloride was used as the C-dopant gas and p-type GaInAs was grown by chemical beam epitaxy using trimethyli ndium, triethylgallium and cracked arsine. Combinations of elemental a nd organometallic group-III sources also resulted in p-type layers. Hi gh performance C-doped base InP/InGaAs heterojunction bipolar transist ors were fabricated using chemical beam epitaxy grown material.