FACET DEGRADATION OF AGED STRAINED-QUANTUM-WELL LASERS STUDIED BY HIGH-VOLTAGE ELECTRON-BEAM-INDUCED CURRENT

Authors
WANG MC HWANG DM LIN PSD DECHIARO L ZAH CE OVADIA S LEE TP DARBY D
Citation
Mc. Wang et al., FACET DEGRADATION OF AGED STRAINED-QUANTUM-WELL LASERS STUDIED BY HIGH-VOLTAGE ELECTRON-BEAM-INDUCED CURRENT, Applied physics letters, 64(23), 1994, pp. 3145-3147
Citations number
15
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
64
Issue
23
Year of publication
1994
Pages
3145 - 3147
Database
ISI
SICI code
0003-6951(1994)64:23<3145:FDOASL>2.0.ZU;2-#
Abstract
High-voltage electron-beam-induced-current imaging is used to study th e aging of two sets of commercial 0.98 mum lasers with identical strai ned quantum wells (In0.2Ga0.8As) but different cladding layers (Al0.55 Ga0.45As versus In0.49Ga0.51P) on GaAs substrates. We observed the dev elopment of facet defects only in the InGaAs/AlGaAs lasers which also exhibited larger threshold-current increases. It therefore suggests th at this facet degradation mode is related to the cladding layer compos ition, not to the strains in the active layer.