Photoresponse signals as fast as 16 ps (full width at half-maximum) ha
ve been observed from current-biased bridge structures of epitaxial YB
a2Cu3O7-delta thin films on LaAlO3 using 5 ps, 820 nm laser pulses. Op
erating at liquid-nitrogen temperature (77.4 K), the amplitude of the
fast response was found to be linear with current at low bias currents
. At higher bias currents, a slow component appeared in the signal wit
h a decay over several nanoseconds which could be attributed to a resi
stive bolometric response. Fast transients about 20 ps wide have been
observed in films with thicknesses ranging from 47 to 200 nm. We belie
ve the fast response is primarily due to a kinetic inductive bolometri
c mechanism associated with heating of the film by the laser pulse. Th
ere is some evidence of a nonbolometric contribution but it is not yet
conclusive.