IN-SITU DC-HYDROGEN PLASMA CLEANING OF SI(111) SURFACES

A DC hydrogen/argon plasma generated in a plasma module coupled to a M BE/STM-system is used for in situ silicon substrate cleaning. The remo val of the native oxide and carbon contamination is monitored by XPS. RHEED and STM observations indicate surface roughening by the plasma p rocess of the order of 10-50 angstrom on a vertical scale and several 100 angstrom on a lateral scale, respectively. The quality of homoepit axial silicon layers grown on the plasma cleaned surface is investigat ed by high-resolution XRD and defect-etching. The results are compared to those achieved with traditional cleaning techniques.