IMPROVEMENT OF CRYSTAL QUALITY OF EPITAXIAL SILICON-GERMANIUM ALLOY LAYERS BY CARBON ADDITIONS

Authors
MI J LETOURNEAU P GANIERE JD GAILHANOU M DUTOIT M DUBOIS C DUPUY JC BREMOND G
Citation
J. Mi et al., IMPROVEMENT OF CRYSTAL QUALITY OF EPITAXIAL SILICON-GERMANIUM ALLOY LAYERS BY CARBON ADDITIONS, Helvetica Physica Acta, 67(2), 1994, pp. 219-220
Citations number
5
Categorie Soggetti
Physics
Journal title
Helvetica Physica Acta → ACNP
ISSN journal
00180238
Volume
67
Issue
2
Year of publication
1994
Pages
219 - 220
Database
ISI
SICI code
0018-0238(1994)67:2<219:IOCQOE>2.0.ZU;2-I
Abstract
Improved Si1-xGex/Si hetero-epitaxy has been achieved by RTCVD in the presence of small amounts of C3H8 during growth. Carbon presumably sca venges oxygen and acts as a surfactant to inhibit three dimensional gr owth.