The creation of vertical cavity phase flip modulators is demonstrated,
both theoretically and experimentally. These modulators rely on both
the ability to make Fabry-Perot cavities which switch the dominant mir
ror responsible for reflection and the use of excitons in a manner whi
ch allows them to provide large absorption changes with zero parasitic
refractive index changes. The current device provides a 180-degrees p
hase change while only changing reflectivity from 65% to 63% with an a
pplied bias of 13.5 V while using an active region only 5000 angstrom
long. These devices can be placed into dense arrays and should have nu
merous applications for stackable optical switching and logic, high-ef
ficiency spatial light modulation, and, with appropriate optimization,
low-reflectivity-change analog phase modulators.