X-RAY-DIFFRACTION STUDIES OF THE EPITAXY OF A B-AXES ORIENTED YBA2CU3O7-DELTA FILMS GROWN BY LIQUID-PHASE EPITAXY/

Citation
F. Sandiumenge et al., X-RAY-DIFFRACTION STUDIES OF THE EPITAXY OF A B-AXES ORIENTED YBA2CU3O7-DELTA FILMS GROWN BY LIQUID-PHASE EPITAXY/, Journal of applied physics, 75(10), 1994, pp. 5243-5248
Citations number
30
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
75
Issue
10
Year of publication
1994
Part
1
Pages
5243 - 5248
Database
ISI
SICI code
0021-8979(1994)75:10<5243:XSOTEO>2.0.ZU;2-H
Abstract
A detailed x-ray diffraction study is reported for a/b-axes oriented Y Ba2Cu3O7-delta films obtained by the liquid phase epitaxy technique. T he films were grown epitaxially in the tetragonal state on (110) NdGaO 3 substrates so that [001]film \\ [110]subs and [100]film \\ [001]subs , 90-degrees-[100]/[010] boundaries were almost absent. Below the tetr agonal-to-orthorhombic transition temperature, the film undergoes inte nsive {hh0}-type twinning. The volume of the a-axis oriented material is similar to that of the b-axis oriented fraction and the presence of both orientations is likely to be controlled by {hh0}-type twinning. High temperature diffraction of the substrate indicates that nucleatio n of YBa2Cu3O7-delta on (110) NdGaO3 takes place on a square two-dimen sional lattice and therefore the observed strong in-plane alignment is probably controlled by impurity action and/or surface relaxation rath er than simple mismatch effects. The difference between the thermal ex pansion coefficients of the film and the substrate (alpha(film)[100], alpha(film)[010]>alpha(subs)[001]) is compensated for upon cooling by a slight rotation (epsilon approximately 0.12-degrees) of {hh0}-type d omain boundaries around the common [001] direction.