EFFECT OF OXIDATION AMBIENT ON THE DIELECTRIC-BREAKDOWN CHARACTERISTICS OF THERMAL OXIDE-FILMS OF SILICON

This study investigated the dielectric breakdown characteristics of th ermal oxide films grown by dry and wet oxidation. Oxide films grown by wet oxidation have lower B-mode failure rates and higher B-mode break down fields. On the other hand, the reliability of C mode of oxide fil ms does not differ consistently between films grown by dry and wet oxi dation. These results indicate that as-grown defect causing B-mode fai lure may shrink or be reduced during wet oxidation.