Raman spectroscopy has been applied to identification of longer-period
SiC polytypes. The stacking structures of 5 1 R and 1 3 2R polytypes
have been examined, the result of which is consistent with electron- a
nd x-ray-diffraction analyses. The possibility is discussed for Raman
determination of the period and stacking structure of longer period po
lytypes. It is demonstrated that Raman scattering is useful for the de
termination of the structure of SiC polytypes.