OPTIMIZATION OF SERIES RESISTANCE IN SUB-0.2 MU-M SOI MOSFETS

The optimization of device series resistance in ultra-thin film SOI de vices is studied through 2-D simulations and process experiments. The series resistance is dependent on the contact resistivity of the silic ide to silicon and the silicide geometry. To achieve low series resist ance, very thin silicides that do not fully consume the SOI film are n eeded. A novel cobalt salicidation technology using titanium/cobalt la minates is used to demonstrate sub-0.2 mum, thin-film SOI devices with excellent performance and very low device series resistance.