IMPROVEMENT OF POLYSILICON OXIDE CHARACTERISTICS BY FLUORINE INCORPORATION

Authors
CHERN HN LEE CL LEI TF
Citation
Hn. Chern et al., IMPROVEMENT OF POLYSILICON OXIDE CHARACTERISTICS BY FLUORINE INCORPORATION, IEEE electron device letters, 15(5), 1994, pp. 181-182
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE electron device letters → ACNP
ISSN journal
07413106
Volume
15
Issue
5
Year of publication
1994
Pages
181 - 182
Database
ISI
SICI code
0741-3106(1994)15:5<181:IOPOCB>2.0.ZU;2-Y
Abstract
The effect of fluorine on the polysilicon oxide (polyoxide) characteri stics is investigated. It is found that the polyoxide leakage current and breakdown strength are improved as fluorine is incorporated into t he oxide film. Experimental results show that the improvement is belie ved to be due to the oxide stress relaxation rather than the change of the polyoxide/polysilicon interface texture.