HIGH-RESOLUTION PHOTOLUMINESCENCE STUDIES OF ACCEPTOR-BOUND EXCITONS IN CDS CDTE HETEROSTRUCTURE UNDER MAGNETIC-FIELD

CdS layers have been grown by CVD onto (111) CdTe substracts. The laye rs exhibit high quality hexagonal structure; sharp luminescence lines identified with radiative recombination of excitons bound to donors an d acceptors were detected. In particular two novel transitions at 2.54 58 eV and 2.5462 eV could be seen in the PL spectrum at 4K. In bulk Cd S only one line occurs at 2.5459 eV and has been associated with the r ecombination of an exciton bound to a neutral acceptor. In order to id entify the origin of the two novel lines the effects of temperature an d of magnetic field, applied parallel and perpendicularly to the hexag onal axis, have been investigated using high resolution photoluminesce nce spectroscopy. The results are quantitatively analysed in terms of transitions occurring from electronic states of the acceptor bound exc iton complex (A0,X) and we show that they can be understood if the two lines occur at two different acceptor centres.