EPITAXIAL BAF2 FILMS ON INP(100) DEPOSITED BY RF MAGNETRON SPUTTERING

Authors
JIA QX ANDERSON WA
Citation
Qx. Jia et Wa. Anderson, EPITAXIAL BAF2 FILMS ON INP(100) DEPOSITED BY RF MAGNETRON SPUTTERING, Thin solid films, 245(1-2), 1994, pp. 60-63
Citations number
5
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
Thin solid films → ACNP
ISSN journal
00406090
Volume
245
Issue
1-2
Year of publication
1994
Pages
60 - 63
Database
ISI
SICI code
0040-6090(1994)245:1-2<60:EBFOID>2.0.ZU;2-H
Abstract
Epitaxial BaF2 thin films were deposited onto InP(100) at a substrate temperature ranging from 450 to 480-degrees-C by r.f. magnetron sputte ring. X-ray diffraction analysis revealed a pure c-axis-oriented film perpendicular to the substrate surface. The X-ray rocking curve of the full width at half-maximum for BaF2(200) was less than 0.8-degrees. T he X-ray pole figure investigation showed good in-plane alignment of t he crystals. A scanning electron microscopy surface scan indicated a h ighly textured film with grid growth morphology.