This study has been carried out to evaluate the interest of chemical v
apour deposition (CVD) (Si-B-C) layers to protect C/C and C/SiC materi
als against oxidation between 850-degrees-C and 1700-degrees-C. The de
posits have been made in a hot wall reactor by a classical CVD techniq
ue. The coatings which were tested were either (Si-B-C) single layers,
or SiC and (Si-B-C) multilayers. This study has shown that the contro
l of the boron content of the (Si-B-C) layers and the thickness of eac
h layer were essential. To achieve a good protection during several ho
urs up to a temperature close to 1700-degrees-C, it seems that a trila
yer SiC-(Si-B-C)-SiC is the most promising solution.