ELECTRONIC BAND-STRUCTURE OF MONOLAYER SB ON GAP(110)

Citation
R. Whittle et al., ELECTRONIC BAND-STRUCTURE OF MONOLAYER SB ON GAP(110), Journal of electron spectroscopy and related phenomena, 68, 1994, pp. 399-405
Citations number
16
Categorie Soggetti
Spectroscopy
ISSN journal
03682048
Volume
68
Year of publication
1994
Pages
399 - 405
Database
ISI
SICI code
0368-2048(1994)68:<399:EBOMSO>2.0.ZU;2-R
Abstract
We have used angle resolved ultra violet photoelectron spectroscopy (A RUPS) with synchrotron radiation to map the two dimensional electronic bandstructure of monolayer Sb on GaP(110). The dispersion of the feat ures in the valence band was followed along the four symmetry directio ns of the surface Brillouin zone using sets of spectra taken at severa l photon energies. Five bands originating from surface states were the n identified and selection rules based on polarisation and emission ge ometry were used to probe the nature of these states. The experimental results are compared with recent tight-binding and pseudopotential ca lculations for Sb/GaP(110).