XPS AND AES STUDY OF REACTIVE TI-SI INTERFACE

Authors
BUZANEVA E VDOVENKOVA T LITVINENKO S MAKHNJUK V STRIKHA V SKRYSHEVSKY V SHEVCHUK P NEMOSHKALENKO V SENKEVICH A SHPAK A
Citation
E. Buzaneva et al., XPS AND AES STUDY OF REACTIVE TI-SI INTERFACE, Journal of electron spectroscopy and related phenomena, 68, 1994, pp. 707-711
Citations number
12
Categorie Soggetti
Spectroscopy
Journal title
Journal of electron spectroscopy and related phenomena → ACNP
ISSN journal
03682048
Volume
68
Year of publication
1994
Pages
707 - 711
Database
ISI
SICI code
0368-2048(1994)68:<707:XAASOR>2.0.ZU;2-R
Abstract
The influence of chemically active metal Al deposition on Ti - oxidize d silicon interface at 300-430 C has been studied. The results of Ti-S i interface investigation after Al deposition on Ti layer and followin g annealing are compared with the conclusions of thermodynamical estim ates of reaction probabilities in Ti-Si, Ti-SiO2, Al-SiO2, Al-TiO2 sys tems.