CONTRIBUTION TO THE CHARACTERIZATION OF REFERENCE MATERIALS FOR THIN-FILM ANALYSIS IN SOLAR-ENERGY AND SEMICONDUCTOR TECHNOLOGIES

A combined approach of independent surface and bulk analytical methods was applied to characterize materials that had been prepared by ion i mplantation of P, Co and Ni ions into high purity silicon, for use as reference materials in thin-film analysis techniques. In this characte rization, high precision and accuracy of 1 - 2 % were obtained by util izing instrumental neutron activation analysis for the determination o f the total implanted ion dose. The impact of the analytical results o n the preparation procedure is discussed.