R. Heyner et al., ANALYTICS OF HARD AMORPHOUS-SILICON CONTAINING PECVD-COATINGS, Fresenius' journal of analytical chemistry, 349(1-3), 1994, pp. 215-216
The present communication deals with investigations of alpha-SiC(N,O):
H thin films produced by DC-plasma enhanced chemical vapor deposition
under high power conditions. In contrast to traditional processes liq
uid precursors (hexamethyldisiloxane-HMDSO, hexamethyldisilazane-HMDSN
), diluted in argon or nitrogen have been used for the decomposition i
n the glow discharge.