TOF-SIMS AND FT-IR INVESTIGATIONS OF SURFACE-MODIFIED SILICON-WAFERS - POROUS SILICON

Authors
DIETRICH R GROBE J MEYER K HAGENHOFF B BENNINGHOVEN A
Citation
R. Dietrich et al., TOF-SIMS AND FT-IR INVESTIGATIONS OF SURFACE-MODIFIED SILICON-WAFERS - POROUS SILICON, Fresenius' journal of analytical chemistry, 349(1-3), 1994, pp. 221-222
Citations number
5
Categorie Soggetti
Chemistry Analytical
Journal title
Fresenius' journal of analytical chemistry → ACNP
ISSN journal
09370633
Volume
349
Issue
1-3
Year of publication
1994
Pages
221 - 222
Database
ISI
SICI code
0937-0633(1994)349:1-3<221:TAFIOS>2.0.ZU;2-W
Abstract
Surface modification of silicon wafers by anodic etching in hydrofluor ic acid results in the formation of porous silicon layers consisting o f nanocrystallites covered with SiH bonds. A combination of high resol ution time-of-flight Secondary lon Mass Spectrometry (TOF-SIMS) and Fo urier Transform Infrared Spectroscopy (FT-IR) was used to study the su rface chemistry of this new material.