HIGH-TEMPERATURE X-RAY-DIFFRACTION STUDIES OF THE CRYSTALLIZATION PROCESS OF THIN AMORPHOUS FILMS WITH THE CHEMICAL-COMPOSITION CRSI2.57

Authors
PITSCHKE W KOCH M HEINRICH A SCHUMANN J
Citation
W. Pitschke et al., HIGH-TEMPERATURE X-RAY-DIFFRACTION STUDIES OF THE CRYSTALLIZATION PROCESS OF THIN AMORPHOUS FILMS WITH THE CHEMICAL-COMPOSITION CRSI2.57, Fresenius' journal of analytical chemistry, 349(1-3), 1994, pp. 246-247
Citations number
6
Categorie Soggetti
Chemistry Analytical
Journal title
Fresenius' journal of analytical chemistry → ACNP
ISSN journal
09370633
Volume
349
Issue
1-3
Year of publication
1994
Pages
246 - 247
Database
ISI
SICI code
0937-0633(1994)349:1-3<246:HXSOTC>2.0.ZU;2-D
Abstract
The crystallization process of amorphous thin films with the chemical composition CrSi2.57 has been investigated by means of high temperatur e X-ray diffractometry. The crystallization of the amorphous as-deposi ted films takes place in two stages; in the first stage CrSi2 is forme d and in the second Si, resulting in a two component nano-disperse str ucture. The results are in agreement with investigations of the thermo power and the electrical conductivity [5, 6].