THEORY OF MAGNETIZATION IN IV-VI BASED DILUTED MAGNETIC SEMICONDUCTORS

Authors
HOTA RL TRIPATHI GS MISRA PK
Citation
Rl. Hota et al., THEORY OF MAGNETIZATION IN IV-VI BASED DILUTED MAGNETIC SEMICONDUCTORS, Journal of applied physics, 75(10), 1994, pp. 5737-5739
Citations number
31
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
75
Issue
10
Year of publication
1994
Part
2A
Pages
5737 - 5739
Database
ISI
SICI code
0021-8979(1994)75:10<5737:TOMIIB>2.0.ZU;2-N
Abstract
The magnetization (M) in IV-VI based diluted magnetic semiconductors i s expressed as a sum of contributions due to isolated impurities, pair interactions, lattice diamagnetism, and spin density due to carriers. We calculate the contribution of each of these mechanisms for p-type Pb1-xMnxTe for different x and magnetic field (H) and compare the resu lts with experiment.